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SFP9540, SFP95N03L, SFP9610

Table of contents:
Info of SFP9540
Info of SFP95N03L
Info of SFP9610

SFP9540, SFP95N03L, SFP9610 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:7800 D/C:07+

SFP9540, SFP95N03L, SFP9610 Datasheet download

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Part Number: SFP9540

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 7800

D/C: 07+

Description: MOSFET P-CH 100V 17A TO-220

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SFP9540 Parameters

Technical/Catalog Information	SFP9540
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	17A
Rds On (Max) @ Id, Vgs	200 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds	1535pF @ 25V
Power - Max	132W
Packaging	Tube
Gate Charge (Qg) @ Vgs	54nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SFP9540 SFP9540

SFP9540 Maximum Ratings

Symbol	Characteristic	Value	Units
V_DSS	Drain-to-Source Voltage	-100	V
I_D	Continuous Drain Current (T_C=25)	-17	A
I_D	Continuous Drain Current (T_C=100)	-12	A
I_DM	Drain Current-Pulsed	-68	A
V_GS	Gate-to-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy	578	mJ
I_AR	Avalanche Current	-17	A
E_AR	Repetitive Avalanche Energy	13.2	mJ
dv/dt	Peak Diode Recovery dv/dt	-6.5	V/ns
P_D	Total Power Dissipation (T_C=25) Linear Derating Factor	132 0.88	W W/°C
T_J,T_STG	Operating Junction and Storage Temperature Range	- 55 to +175	°C
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds	300	°C

SFP9540 Features

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` 175 Opereting Temperature
` Extended Safe Operating Area
` Lower Leakage Current : -10 A (Max.) @ V_DS = -100V
` Low R_DS(ON) : 0.161 (Typ.)

SFP95N03L General Description

This Power MOSFET is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.

SFP95N03L Maximum Ratings

Symbol	Parameter	Value	Units
V_DSS	Drain to Source Voltage	30	V
I_D	Continuous Drain Current (T_C=25)(Note 6)	95	A
I_D	Continuous Drain Current (T_C=100)	67.3	A
I_DM	Drain Current Pulsed(Note 1)	380	A
V_GS	Gate to Source Voltage	±20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	450	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
P_D	Total Power Dissipation (@ T_C=25)	150	W
P_D	Derating Factor above 25 °C	1.0	W/°C
T_STG,T_J	Operating Junction Temperature & Storage Temperature	- 55 ~ 175	°C
T_L	Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.	300	°C

SFP95N03L Features

` Low R_DS(on) (0.0085 )@V_GS=10V
` Low Gate Charge (Typical 39nC)
` Low Crss (Typical 185pF)
` Improved dv/dt Capability
` 100% Avalanche Tested
` Maximum Junction Temperature Range (175°C)

SFP9610 Maximum Ratings

Symbol	Characteristic	Value	Units
V_DSS	Drain-to-Source Voltage	-200	V
I_D	Continuous Drain Current (T_C=25)	-1.75	A
I_D	Continuous Drain Current (T_C=100)	-1.0	A
I_DM	Drain Current-Pulsed	-7.0	A
V_GS	Gate-to-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy	143	mJ
I_AR	Avalanche Current	-1.75	A
E_AR	Repetitive Avalanche Energy	2.0	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
P_D	Total Power Dissipation (T_C=25) Linear Derating Factor	20 0.16	W W/°C
T_J,T_STG	Operating Junction and Storage Temperature Range	- 55 to +150	°C
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds	300	°C

SFP9610 Features

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : -10 A (Max.) @ V_DS = -200V
` Low R_DS(ON) : 2.084 (Typ.)

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