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SGM2014AN, SGM2014M-T1, SGM2014M-T7

SGM2014AN, SGM2014M-T1, SGM2014M-T7 Selling Leads, Datasheet

MFG:SONY  Package Cooled:4P/SOT23  D/C:09+

SGM2014AN, SGM2014M-T1, SGM2014M-T7 Picture

SGM2014AN, SGM2014M-T1, SGM2014M-T7 Datasheet download

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Part Number: SGM2014AN

 

MFG: SONY

Package Cooled: 4P/SOT23

D/C: 09+

 

 

 
 
 
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About SGM2014AN

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Datasheet: SGM2014AN

File Size: 58524 KB

Manufacturer: SONY [Sony Corporation]

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About SGM2005-3.0YD6/TR

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Datasheet: SGM2005-3.0YD6/TR

File Size: 538484 KB

Manufacturer: SGMICRO [Shengbang Microelectronics Co, Ltd]

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About SGM2005-3.0YD6/TR

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Datasheet: SGM2005-3.0YD6/TR

File Size: 538484 KB

Manufacturer: SGMICRO [Shengbang Microelectronics Co, Ltd]

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SGM2014AN General Description


The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.

This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.

SGM2014AN Maximum Ratings

• Drain to source voltage                  VDSX                   12 V
• Gate 1 to source voltage                VG1S                  5 V
• Gate 2 to source voltage                VG2S                  5 V
• Drain current                                  ID                     55 mA
• Allowable power dissipation           PD                 100 mW
• Channel temperature                     Tch                   125
• Storage temperature                     Tstg    55 to +150

SGM2014AN Features

• Ultra small package
• Low voltage operation
• Low noise: NF = 1.5dB (typ.) at 900MHz
• High gain: Ga = 18dB (typ.) at 900MHz
• Low cross-modulation
• High stability
• Built-in gate-protection diode

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