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SPI214, SPI216, SPI21N10

Table of contents:
Info of SPI214
Info of SPI216
Info of SPI21N10

SPI214, SPI216, SPI21N10 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:04+/05+ D/C:3.5mm

SPI214, SPI216, SPI21N10 Datasheet download

Five Points

Part Number: SPI21N10

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: 04+/05+

D/C: 3.5mm

Description: MOSFET N-CH 100V 21A TO-262

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SPI21N10 Parameters

Technical/Catalog Information	SPI21N10
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	80 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	865pF @ 25V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	38.4nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPI21N10 SPI21N10 SPI21N10IN ND SPI21N10INND SPI21N10IN

SPI21N10 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C = 100 °C	I_D	21 15.0	A
Pulsed drain current T_C = 25 °C	I_D _puls	84	A
Avalanche energy, single pulse I_D =21 A, V_DD = 25 V, R_GS = 25	E_AS	130	mJ
Reverse diode dv/dt I_S =21 A, V_DS = 80 V, di/dt = 200 A/s, T_jmax = 175 °C	dv/dt	6	kV/s
Gate source voltage	V_GS	±20	V
Power dissipation T_C = 25 °C	P_tot	90	W
Operating and storage temperature	T_j, T_stg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

SPI21N10 Features

· N-Channel
· Enhancement mode
·175°C operating temperature
· Avalanche rated
· dv/dt rated

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