SSF5853DC, SSF7N60, SSF7N60B Selling Leads, Datasheet
MFG:SEMITEL Package Cooled:BGA D/C:2009
SSF5853DC, SSF7N60, SSF7N60B Datasheet download
Part Number: SSF5853DC
MFG: SEMITEL
Package Cooled: BGA
D/C: 2009
SSF5853DC, SSF7N60, SSF7N60B
- Table of contents:
Info of SSF5853DC
Info of SSF7N60
Info of SSF7N60B
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About SSF10N60A
PDF/DataSheet Download
Datasheet: SSF10N60A
File Size: 262714 KB
Manufacturer: Fairchild Semiconductor
Download : Click here to Download
About SSF7N60B
PDF/DataSheet Download
Datasheet: SSF7N60B
File Size: 672638 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSF7N60B
PDF/DataSheet Download
Datasheet: SSF7N60B
File Size: 672638 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SSF7N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSF7N60B Maximum Ratings
| Symbol | Parameter | SSF7N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
5.4 | A |
| 3.4 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 21.6 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 420 | mJ |
| IAR | Avalanche Current (Note 1) | 5.4 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 8.6 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
86 | W |
| 0.69 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
SSF7N60B Features
• 5.4A, 600V, R DS(on) = 1.2Ω @VGS = 10 V
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 23 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 23 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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