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SSW2N60B, SSW2N80A, SSW2N90A

SSW2N60B, SSW2N80A, SSW2N90A Selling Leads, Datasheet

MFG:FAIRCHILD  Package Cooled:9800  D/C:TO

SSW2N60B, SSW2N80A, SSW2N90A Picture

SSW2N60B, SSW2N80A, SSW2N90A Datasheet download

Five Points

Part Number: SSW2N60B

 

MFG: FAIRCHILD

Package Cooled: 9800

D/C: TO

 

 

 
 
 
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SSW2N60B Suppliers

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  • SSW11401SS

  • Vendor: SAMES Qty: 50 Note: STOCK-NEW  Adddate: 2024-04-28
  • Inquire Now
  • InfinityComponents   United
    Contact: Mr.George Lovett  
    Tel: 001-603-430-8040
    Fax: 001-603-430-8068
    (0)
  • SSW-116-01-T-D

  • Vendor: SAMTEC D/C: 02+&   Adddate: 2024-04-28
  • Inquire Now
  • TCLT Co.,LTD.   China
    Contact: Ms.BrandyHua  
    Tel: 86-755-29929313ext801
    Fax: --
    (0)

About SSW2N60B

PDF/DataSheet Download

Datasheet: SSW2N60B

File Size: 662659 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Download : Click here to Download

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SSW2N80A Suppliers

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  • SSW11401SS

  • Vendor: SAMES Qty: 50 Note: STOCK-NEW  Adddate: 2024-04-28
  • Inquire Now
  • InfinityComponents   United
    Contact: Mr.George Lovett  
    Tel: 001-603-430-8040
    Fax: 001-603-430-8068
    (0)
  • SSW-116-01-T-D

  • Vendor: SAMTEC D/C: 02+&   Adddate: 2024-04-28
  • Inquire Now
  • TCLT Co.,LTD.   China
    Contact: Ms.BrandyHua  
    Tel: 86-755-29929313ext801
    Fax: --
    (0)

About SSW/I1N60A

PDF/DataSheet Download

Datasheet: SSW/I1N60A

File Size: 262521 KB

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SSW2N90A Suppliers

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  • SSW11401SS

  • Vendor: SAMES Qty: 50 Note: STOCK-NEW  Adddate: 2024-04-28
  • Inquire Now
  • InfinityComponents   United
    Contact: Mr.George Lovett  
    Tel: 001-603-430-8040
    Fax: 001-603-430-8068
    (0)
  • SSW-116-01-T-D

  • Vendor: SAMTEC D/C: 02+&   Adddate: 2024-04-28
  • Inquire Now
  • TCLT Co.,LTD.   China
    Contact: Ms.BrandyHua  
    Tel: 86-755-29929313ext801
    Fax: --
    (0)

About SSW2N90A

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Datasheet: SSW2N90A

File Size: 268360 KB

Manufacturer:

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SSW2N60B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

SSW2N60B Maximum Ratings

Symbol Parameter SSW2N60B / SSI2N60B Units
VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)
2.0 A
1.3 A
IDM Drain Current - Pulsed (Note 1) 6.0 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ
IAR Avalanche Current (Note 1) 2.0 A
EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25°C)
3.13 W
Power Dissipation (TC = 25°C)
                  - Derate above 25°C
54 W
0.43 W/°C
TJ, TSTG Operating and
Storage Temperature Range
-55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C

SSW2N60B Features

• 2.0A, 600V, R DS(on) = 5.0Ω @VGS = 10 V
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

SSW2N80A Maximum Ratings

Symbol

Characteristic

Value

Units

VDSS

Drain-to-Source Voltage

800

V

ID

Continuous Drain Current (TC=25 )

2

A

Continuous Drain Current (TC=100OC )

1.3

IDM

Drain Current-Pulsed

8

A

VGS

Gate-to-Source Voltage

± 30

V

EAS

Single Pulsed Avalanche Energy

213

mJ

IAR

Avalanche Current

2

A

EAR

Repetitive Avalanche Energy

8

mJ

dv/dt

Peak Diode Recovery dv/dt

2.0

V/ns

PD

Total Power Dissipation (TC=25OC )
Linear Derating FactorW

3.1
80

W/OC

TJ , TSTG

Operating Junction and
Storage Temperature Range

0.64
- 55 to +150

OC

TL

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds

300

SSW2N80A Features

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 800V
Lower RDS(ON) : 4.046 (Typ.)

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