SSW3N80A, SSW3N90A, SSW4N60B Selling Leads, Datasheet
MFG:FSC Package Cooled:9800 D/C:T0-262
SSW3N80A, SSW3N90A, SSW4N60B Datasheet download
Part Number: SSW3N80A
MFG: FSC
Package Cooled: 9800
D/C: T0-262
SSW3N80A, SSW3N90A, SSW4N60B
- Table of contents:
Info of SSW3N80A
Info of SSW3N90A
Info of SSW4N60B
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About SSW3N80A
PDF/DataSheet Download
Datasheet: SSW3N80A
File Size: 679337 KB
Manufacturer:
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About SSW3N90A
PDF/DataSheet Download
Datasheet: SSW3N90A
File Size: 672974 KB
Manufacturer:
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About SSW4N60B
PDF/DataSheet Download
Datasheet: SSW4N60B
File Size: 657985 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SSW4N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSW4N60B Maximum Ratings
| Symbol | Parameter | SSW4N60B / SSI4N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
4.0 | A |
| 2.5 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 16 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 240 | mJ |
| IAR | Avalanche Current (Note 1) | 4.0 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 10 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TA = 25°C) |
3.13 | W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
100 | W | |
| 0.8 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
SSW4N60B Features
• 4.0A, 600V, R DS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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