SSW1N50B, SSW1N60A, SSW1N60B Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-263 D/C:TO
SSW1N50B, SSW1N60A, SSW1N60B Datasheet download
Part Number: SSW1N50B
MFG: FAIRCHILD
Package Cooled: TO-263
D/C: TO
SSW1N50B, SSW1N60A, SSW1N60B
- Table of contents:
Info of SSW1N50B
Info of SSW1N60A
Info of SSW1N60B
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About SSW1N50B
PDF/DataSheet Download
Datasheet: SSW1N50B
File Size: 614619 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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About SSW1N60A
PDF/DataSheet Download
Datasheet: SSW1N60A
File Size: 266559 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSW1N60B
PDF/DataSheet Download
Datasheet: SSW1N60B
File Size: 622486 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SSW1N50B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
SSW1N50B Maximum Ratings
| Symbol | Parameter | SSW1N50B / SSI1N50B | Units |
| VDSS | Drain-Source Voltage | 520 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
1.5 | A |
| 0.97 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 5.0 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 100 | mJ |
| IAR | Avalanche Current (Note 1) | 1.5 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 3.6 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TA = 25°C) |
3.13 | W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
36 | W/°C | |
| 0.29 | |||
| TJ, TSTG | Operating and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
SSW1N50B Features
• 1.5A, 520V, R DS(on) = 5.3Ω @VGS = 10 V
• Low gate charge ( typical 8.3 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 8.3 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
SSW1N60A Maximum Ratings
| Symbol | Characteristic | Value | Units |
| VDSS | Drain-to-Source Voltage | 600 | V |
| ID | Continuous Drain Current (TC=25 ) | 1 | A |
| Continuous Drain Current (TC=100 ) | 0.6 | ||
| IDM | Drain Current-Pulsed | 3 | A |
| VGS | Gate-to-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy | 44 | mJ |
| IAR | Avalanche Current | 1 | A |
| EAR | Repetitive Avalanche Energy | 3.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.0 | V/ns |
| PD | Total Power Dissipation (TA=25) | 3.1 | W |
| Total Power Dissipation (TC=25 ) Linear Derating Factor |
34 0.27 |
W W/ | |
| TJ , TSTG | Operating Junction and Storage Temperature Range |
- 55 to +150 | |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
L=80mH, IAS=1A, VDD=50V, RG=27 , Starting TJ =25
ISD 1A, di/dt 60A/ s, VDD BVDSS , Starting TJ =25
SSW1N60A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS = 600V
Low RDS(ON) : 9.390 W (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS = 600V
Low RDS(ON) : 9.390 W (Typ.)
SSW1N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSW1N60B Maximum Ratings
| Symbol | Parameter | SSW1N60B / SSI1N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
1.0 | A |
| 0.6 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 3.0 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 50 | mJ |
| IAR | Avalanche Current (Note 1) | 1.0 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 3.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TA = 25°C) |
3.13 | W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
34 | W | |
| 0.27 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
SSW1N60B Features
• 1.0A, 600V, R DS(on) = 12Ω @VGS = 10 V
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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