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STE38NB50F, STE40NA60, STE40NC60

Table of contents:
Info of STE38NB50F
Info of STE40NA60
Info of STE40NC60

STE38NB50F, STE40NA60, STE40NC60 Selling Leads, Datasheet

MFG:ST Package Cooled:9800 D/C:TO

STE38NB50F, STE40NA60, STE40NC60 Picture

STE38NB50F, STE40NA60, STE40NC60 Datasheet download

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Part Number: STE38NB50F

MFG: ST

Package Cooled: 9800

D/C: TO

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STE38NB50F General Description

Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STE38NB50F Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Drain-source Voltage (V_GS = 0)	500	V
V_DGR	Drain- gate Voltage (R_GS = 20 kW)	500	V
V_GE	Gate-Emitter Voltage	± 30	V
I_D	Drain Current (continuous) at T_c = 25 oC	38	A
I_d	Drain Current (continuous) at T_c = 100 oC	24	A
I_CM(•)	Drain Current (pulsed)	152	A
P_tot	Total Dissipation at T_c= 25 ^oC	400	W
	Derating Factor	3.2	W/^oC
d_v/dt(1)	Peak Diode Recovery voltage slope	4.5	V/ns
T_stg	Storage Temperature	-55 to 150	^oC
V_j	Max. Operating Junction Temperature	2500	^oC

STE38NB50F Features

TYPICAL R_DS(on) = 0.11 W
EXTREMELY HIGH dv/dt CAPABILITY
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
LOW INTRINSIC CAPACITANCE
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD

STE38NB50F Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLY (SMPS)
DC-AC CONVERTER FOR WELDING EQUIPMENT AND
UNINTERRUPTABLE POWERSUPPLY AND MOTOR DRIVE

STE40NA60 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Drain-source Voltage (V_GS = 0)	600	V
V_DGR	Drain- gate Voltage (R_GS = 20 kW)	600	V
V_GE	Gate-Emitter Voltage	± 30	V
I_D	Drain Current (continuous) at T_c = 25 oC	40	A
I_d	Drain Current (continuous) at T_c = 100 oC	26	A
I_CM(•)	Collector Current (pulsed)	160	A
P_tot	Total Dissipation at T_c= 25 ^oC	460	W
	Derating Factor	3.6	W/^oC
T_stg	Storage Temperature	-55 to 150	^oC
T_j	Max.Operating Junction Temperature	150	^oC
V_ISO	Insulation Withhstand Voltage (AC-RMS)	2500	V

STE40NA60 Features

TYPICAL R_DS(on) = 0.12 W
HIGH CURRENT POWER MODULE
AVALANCHERUGGED TECHNOLOGY
VERY LARGE SOA - LARGE PEAKPOWER CAPABILITY
EASY TO MOUNT
SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS
EXTREMELY LOW Rth (Junction to case)
VERYLOW INTERNAL PARASITIC INDUCTANCE
ISOLATEDPACKAGE UL RECOGNIZED

STE40NA60 Typical Application

SMPS & UPS
MOTOR CONTROL
WELDING EQUIPMENT
OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS

STE40NC60 General Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

STE40NC60 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Drain-source Voltage (VGS = 0)	600	V
V_DGR	Drain- gate Voltage (RGS = 20 kW)	600	V
V_GE	Gate-Emitter Voltage	± 30	V
I_D	Drain Current (continuous) at T_C = 25°C (Steady State)	40	A
I_D	Drain Current (continuous) at T_C= 100°C	23	A
I_{DM (*)}	Drain Current (pulsed)	160	A
P_TOT	Total Dissipation at T_C = 25°C (Steady State)	460	W
	Derating Factor	3.68	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	3	V/ns
VISO	Insulation Winthstand Voltage (AC-RMS)	2500	V
T_j	Operating Junction Temperature	- 65 to 150	°C
T_stg	Storage Temperature	150	°C

STE40NC60 Features

TYPICAL R_DS(on) = 0.098 W
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED

STE40NC60 Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND
UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER

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