STE48NM50, STE48NM60, STE53N50 Selling Leads, Datasheet
MFG:ST Package Cooled:09+ D/C:TO
STE48NM50, STE48NM60, STE53N50 Datasheet download
Part Number: STE48NM50
MFG: ST
Package Cooled: 09+
D/C: TO
STE48NM50, STE48NM60, STE53N50
- Table of contents:
Info of STE48NM50
Info of STE48NM60
Info of STE53N50
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About STE48NM50
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Datasheet: STE48NM50
File Size: 280005 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About STE48NM60
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Datasheet: STE48NM60
File Size: 356218 KB
Manufacturer: STMicroelectronics
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About STE10
PDF/DataSheet Download
Datasheet: STE10
File Size: 412902 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
STE48NM50 General Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
STE48NM50 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Drain-source Voltage (VGS = 0) |
500 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
500 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 30 |
V | |
|
ID |
Drain Current (continuous) at TC = 25°C (Steady State) |
48 |
A | |
|
ID |
Drain Current (continuous) at TC = 100°C |
30 |
A | |
|
IDM (*) |
Drain Current (pulsed) |
192 |
A | |
|
PTOT |
Total Dissipation at TC = 25°C (Steady State) |
450 |
W | |
|
|
Derating Factor |
3.6 |
KV | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
15 |
V/ns | |
|
Tj |
Operating Junction Temperature |
- 65 to 150 |
°C | |
|
Tstg |
Storage Temperature |
150 |
°C | |
STE48NM50 Features
TYPICAL RDS(on) = 0.08W
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
STE48NM50 Typical Application
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
STE48NM60 General Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
STE48NM60 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 k) |
600 |
V |
|
VGS |
Gate- source Voltage |
±30 |
V |
|
ID |
Drain Current (continuos) at TC = 25 |
48 |
A |
|
ID |
Drain Current (continuos) at TC = 100 |
30 |
A |
|
IDM (`) |
Drain Current (pulsed) |
192 |
A |
|
Ptot |
Total Dissipation at TC = 25 |
450 |
W |
| Derating Factor |
3.57 |
W/ | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
15 |
V/ns |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
Tj |
Operating Junction Temperature |
150 |
(`) Pulse width limited by safe operating area.
(1) ISD 48A, di/dt 400 µA, VDD V(BR)DSS, Tj TJMAX.
STE48NM60 Features
` TYPICAL RDS(on) = 0.09
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
STE48NM60 Typical Application
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
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