STL34NF06, STL350-230, STL35NF10 Selling Leads, Datasheet
MFG:ST Package Cooled:QFN D/C:08+
STL34NF06, STL350-230, STL35NF10 Datasheet download
Part Number: STL34NF06
MFG: ST
Package Cooled: QFN
D/C: 08+
STL34NF06, STL350-230, STL35NF10
- Table of contents:
Info of STL34NF06
Info of STL350-230
Info of STL35NF10
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About STL34NF06
PDF/DataSheet Download
Datasheet: STL34NF06
File Size: 117232 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STL100NH3LL
PDF/DataSheet Download
Datasheet: STL100NH3LL
File Size: 493880 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STL35NF10
PDF/DataSheet Download
Datasheet: STL35NF10
File Size: 168961 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
STL34NF06 General Description
This Power MOSFET is the second generation of STMicroelectronics unique "STripFET™" technology.The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT ™ package allow a significant reduction in board space without compramising performance.
STL34NF06 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 60 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 60 | V |
| VGS | Gate- source Voltage | ± 20 | V |
| ID | Drain Current (continuos) at TC = 25(*) Drain Current (continuos) at TC = 100 |
34 20 |
A A |
| IDM(•) | Drain Current (pulsed) | 136 | A |
| PTOT | Total Dissipation at TC = 25 | 70 | W |
| Derating Factor | 0.56 | W/ | |
| EAS (1) | Single Pulse Avalanche Energy | 250 | mJ |
| Tstg | Storage Temperature | 55 to 150 | |
| Tj | Max. Operating Junction Temperature |
(*) Current Limited by Wire Bonding is 20A
(1) Starting Tj = 25°C, ID = 17A, VDD = 42V
STL34NF06 Features
TYPICAL RDS(on) = 0.024
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE
STL34NF06 Typical Application
DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
STL35NF10 General Description
This Power MOSFET is the second generation of TMicroelectronics unique "STripFET™" technology.The resulting transistor shows extremely low onresistanceand minimal gate charge. The new PowerFLAT™ package allows a significant reduction inboard space without compromising performance.
STL35NF10 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 100 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 100 | V |
| VGS | Gate- source Voltage | ± 20 | V |
| ID | Drain Current (continuos) at TC = 25 Drain Current (continuos) at TC = 100 |
35 22 |
A A |
| IDM | (l) Drain Current (pulsed) | 140 | A |
| PTOT | Total Dissipation at TC = 25 | 80 | W |
| Derating Factor | 0.64 | W/°C | |
| EAS(1) | Single Pulse Avalanche Energy | 135 | mJ |
| Tstg | Storage Temperature | 65 to 150 | °C |
| Tj | Max. Operating Junction Temperature | 55 to 150 | °C |
STL35NF10 Features
TYPICAL RDS(on) = 0.025W
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE
STL35NF10 Typical Application
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