Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
This Power MOSFET is the second generation of STMicroelectronics unique "STripFET™" technology.The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT ™ package allows a significant reduction in board space without compromising performance.
STL35NF3LL Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 k )
30
V
VGS
Gate- source Voltage
± 15
V
ID(#)
Drain Current (continuos) at TC = 25 Drain Current (continuos) at TC = 100
35 22
A A
IDM()
Drain Current (pulsed)
140
A
PTOT(2)
Total Dissipation at TC = 25(Steady State)
80
W
Derating Factor(2)
0.64
W/
dv/dt(1)
Peak Diode Recovery voltage slope
TBD
V/ns
EAS (2)
Single Pulse Avalanche Energy
TBD
J
Tstg
Storage Temperature
55 to 150
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area (#) Limited by Wire Bonding (1)ISD<35A, di/dt<300A/s, VDD<V(BR)DSS, TJ<TJMAX (2) Starting Tj = 25, ID = 30A, VDD = 27.5V
STL35NF3LL Features
TYPICAL RDS(on) = 0.0055 IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE
STL35NF3LL Typical Application
DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC EQUIPMENT