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This application specific MOSFET is the lastest generation of STMicroelectronics unique "STripFET™" technology. The resulting transistor is optimized for low on-resistance and minimal gate charge. The Chip-scaled PowerFLAT™ package allows a significant board space saving, still boosting the performance.
STL8NH3LL Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 k )
30
V
VGS
Gate- source Voltage
± 16
V
ID(2)
Drain Current (continuos) at TC = 25(Steady State)
8
A
ID(2)
Drain Current (continuos) at TC = 100(Steady State)
5
A
IDM(3)
Drain Current (pulsed)
32
A
PTOT(2)
Total Dissipation at TC = 25(Steady State)
50
W
Ptot(1)
Total Dissipation at TC = 25
1.56
W
Derating Factor(2)
0.4
W/
Tstg
Storage Temperature
55 to 150
Tj
Operating Junction Temperature
STL8NH3LL Features
TYPICAL RDS(on) = 0.012 @ 10V IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE VERY LOW GATE CHARGE LOW THRESHOLD DEVICE