MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:N/A D/C:2006
STN1NHC60, STN1NHK60, STN1NK60Z Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: N/A
D/C: 2006
Description: MOSFET N-CH 600V 300MA SOT223
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PDF/DataSheet Download
Datasheet: STN1802
File Size: 49507 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STN1802
File Size: 49507 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STN1NK60Z
File Size: 673069 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STN1NK60Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 300mA |
| Rds On (Max) @ Id, Vgs | 15 Ohm @ 400mA, 10V |
| Input Capacitance (Ciss) @ Vds | 94pF @ 25V |
| Power - Max | 3.3W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 6.9nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STN1NK60Z STN1NK60Z 497 3523 2 ND 49735232ND 497-3523-2 |
The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
| Symbol | Parameter |
Value |
Unit | ||
|
IPAK |
TO-92 |
SOT-223 | |||
| VDS | Collector-Source Voltage (VGS = 0 V) |
600 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | ||
| VGS | Gate-Source Voltage |
±30 |
V | ||
| ID | Drain Current (continuous) at TC = 25 |
0.8 |
0.3 |
0.3 |
A |
| ID | Drain Current (continuous) at TC = 100 |
0.5 |
0.189 |
0.189 |
A |
| IDM(`) | Drain Current (pulsed) |
3.2 |
1.2 |
1.2 |
A |
| PTOT | Total Dissipation at TC = 25 |
25 |
3 |
3.3 |
W |
| Derating Factor |
0.24 |
0.025 |
0.026 |
W/ | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
800 |
V | ||
| dv/dt(1) | Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
|||
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