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The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
STN1HNC60 Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 k )
600
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25
0.4
A
ID
Drain Current (continuos) at TC = 100
0.25
A
IDM(1)
Drain Current (pulsed)
1.6
A
PTOT
Total Dissipation at TC = 25
2.5
W
Derating Factor
0.02
W/
dv/dt
Peak Diode Recovery voltage slope
3.5
V/ns
Tstg
Storage Temperature
65 to 150
Tj
Max. Operating Junction Temperature
150
(•)Pulse width limited by safe operating area (1) ISD 0.4 A, di/dt 100 A/s, VDD V(BR)DSS, Tj TJMAX
STN1HNC60 Features
TYPICAL RDS(on) = 7 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
STN1HNC60 Typical Application
AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT