MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:. D/C:09+
STN2NF06L, STN2NF10, STN2NF10L Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: .
D/C: 09+
Description: MOSFET N-CH 100V 2.4A SOT-223
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Datasheet: STN2NF06L
File Size: 297707 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STN2NF10
File Size: 265402 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STN1802
File Size: 49507 KB
Manufacturer: STMicroelectronics
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This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 60 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 60 | V |
| VGS | Gate- source Voltage | ± 16 | V |
| ID | Drain Current (continuos) at TC = 25 |
2 | A |
| ID | Drain Current (continuos) at TC = 100 | 1.2 | A |
| IDM() | Drain Current (pulsed) | 8 | A |
| PTOT | Total Dissipation at TC = 25 | 3 | W |
| Derating Factor | 8 | W/ | |
| dv/dt (2) | Peak Diode Recovery voltage slope |
6 |
V/ns |
| EAS(3) | Single Pulse Avalanche Energy | 200 | mJ |
| Tstg | Storage Temperature | -55 to 150 | |
| Tj | Max. Operating Junction Temperature | -55 to 150 |
() Pulse width limited by safe operating area. (1) Related to Rthj -l(2) ISD 2A, di/dt 100 A/s, VDD V(BR)DSS, Tj TJMAX(3) Starting Tj = 25 , ID = 2A, VDD = 30V
| Technical/Catalog Information | STN2NF10 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 2.4A |
| Rds On (Max) @ Id, Vgs | 260 mOhm @ 1.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 280pF @ 25V |
| Power - Max | 3.3W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 14nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STN2NF10 STN2NF10 497 8023 1 ND 49780231ND 497-8023-1 |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 100 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 100 | V |
| VGS | Gate- source Voltage | ± 20 | V |
| ID() | Drain Current (continuos) at TC = 25 |
2 | A |
| ID | Drain Current (continuos) at TC = 100 | 1.26 | A |
| IDM() | Drain Current (pulsed) | 8 | A |
| PTOT | Total Dissipation at TC = 25 | 2.5 | W |
| Derating Factor | 0.02 | W/ | |
| EAS(1) | Single Pulse Avalanche Energy | 300 | mJ |
| Tstg | Storage Temperature | 65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
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