MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:. D/C:SOT-223
STN3NF06L, STN3NF06L-TR, STN3NF10 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics (VA)
Package Cooled: .
D/C: SOT-223
Description: MOSFET N-CH 60V 4A SOT223
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Datasheet: STN3NF06L
File Size: 293316 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STN1802
File Size: 49507 KB
Manufacturer: STMicroelectronics
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PDF/DataSheet Download
Datasheet: STN1802
File Size: 49507 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
| Technical/Catalog Information | STN3NF06L |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 1.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 340pF @ 25V |
| Power - Max | 3.3W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 9nC @ 5V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STN3NF06L STN3NF06L 497 3177 1 ND 49731771ND 497-3177-1 |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 60 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 60 | V |
| VGS | Gate- source Voltage | ± 16 | V |
| ID() | Drain Current (continuos) at TC = 25 |
4 |
A |
| ID | Drain Current (continuos) at TC = 100 | 2.9 | A |
| IDM() | Drain Current (pulsed) | 16 | A |
| PTOT | Total Dissipation at TC = 25 | 3.3 | W |
| Derating Factor | 0.026 | W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope | 10 | V/ns |
| EAS(2) | Single Pulse Avalanche Energy | 200 | mJ |
| Tstg | Storage Temperature | -55 to 150 | |
| Tj | Max. Operating Junction Temperature | -55 to 150 |
(``) Pulse width limited by safe operating area.(`) Current limited by the package (1) ISD 3A, di/dt 150 A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 oC, ID = 4A, VDD = 30V
TYPICAL RDS(on) = 0.07
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
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