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STN3PF06, STN3PF06L, STN4NE03

STN3PF06, STN3PF06L, STN4NE03 Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Discrete Semiconductor Products  Package Cooled:SOT-223  D/C:09+

STN3PF06 Picture

STN3PF06, STN3PF06L, STN4NE03 Datasheet download

Five Points

Part Number: STN3PF06

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: SOT-223

D/C: 09+

Description: MOSFET P-CH 60V 2.5A SOT223

 

 
 
 
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  • TODENKI ELECTRONICS COMPANY   China
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  • STN3PF06

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About STN3PF06

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Datasheet: STN3PF06

File Size: 121032 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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  • STN1N06

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  • STN1NE06

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  • STN1NF10

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About STN1802

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Datasheet: STN1802

File Size: 49507 KB

Manufacturer: STMicroelectronics

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  • STN1A60

  • Vendor: SemiWell Pack: TO D/C: 07+&   Adddate: 2026-08-13
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    Contact: Ms.edithchen   MSN:EDITH_CHEN@126.COM
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  • STN1N06

  • Vendor: ST Pack: SOT D/C: 09+& Qty: 52500  Adddate: 2026-08-13
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  • ao chuang electronic   China
    Contact: Mr.Ms,Zhao   MSN:aochuang.dz@msn.cn
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  • STN1N20

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  • STN1NE06

  • Vendor: ST Pack: SOT D/C: 09+& Qty: 52500  Adddate: 2026-08-13
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  • ao chuang electronic   China
    Contact: Mr.Ms,Zhao   MSN:aochuang.dz@msn.cn
    Tel: 86-755-83281916
    Fax: 86-755-83281916
    (26)

About STN4NE03

PDF/DataSheet Download

Datasheet: STN4NE03

File Size: 93533 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STN3PF06 Parameters

Technical/Catalog InformationSTN3PF06
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C2.5A
Rds On (Max) @ Id, Vgs220 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 850pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs21nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STN3PF06
STN3PF06
497 4116 2 ND
49741162ND
497-4116-2

STN3PF06 General Description

This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STN3PF06 Maximum Ratings

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuos) at TC = 25
2.5 A
ID Drain Current (continuos) at TC = 100 1.5 A
IDM() Drain Current (pulsed) 10 A
PTOT Total Dissipation at TC = 25 2.5 W
  Derating Factor 0.02 W/
dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 150

(l) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual poloarity of Voltages and current has to be reversed
(1) ISD 3A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX

STN3PF06 Features

 TYPICAL RDS(on) = 0.18
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
LOW THRESHOLD DRIVE

STN3PF06 Typical Application

 DC-DC & DC-AC CONVERTERS
 DC MOTOR CONTROL (DISK DRIVES, etc.)

STN4NE03 General Description

This Power MOSFET is the latest development ofSTMicroelectronics unique " Single FeatureSize]  "  strip-based process. The resultingtransistor shows extremely high packing densityfor low on-resistance, rugged avalanche haracteristics and less critical alignment stepstherefore a remarkable manufacturingreproducibility.

STN4NE03 Maximum Ratings

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 k ) 30 V
VGS Gate- source Voltage ± 20 V
ID(*) Drain Current (continuos) at TC = 25
4 A
ID(*) Drain Current (continuos) at TC = 100 2.5 A
IDM() Drain Current (pulsed) 16 A
PTOT Total Dissipation at TC = 25 2.5 W
  Derating Factor 0.02 W/
dv/dt(1) Peak Diode Recovery voltage slope 6 mJ
Tstg Storage Temperature 65 to 150
Tj Max. Operating Junction Temperature 150

(•) Pulse width limited by safe operating area (*) Limited by package (1)ISD10A, di/dt 300A/ s, VDD V(BR)DSS, Tj TjMAX

STN4NE03 Features

TYPICAL RDS(on) = 0.045
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHERUGGED TECHNOLOGY
100% AVALANCHE TESTED
APPLICATION ORIENTED HARACTERIZATION

STN4NE03 Typical Application

 DC MOTOR CONTROL (DISK DRIVES, etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
POWER MANAGEMENT INBATTERY-OPERATED AND PORTABLE QUIPMENT

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