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This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STN3PF06 Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain-gate Voltage (RGS = 20 k )
60
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuos) at TC = 25
2.5
A
ID
Drain Current (continuos) at TC = 100
1.5
A
IDM()
Drain Current (pulsed)
10
A
PTOT
Total Dissipation at TC = 25
2.5
W
Derating Factor
0.02
W/
dv/dt (1)
Peak Diode Recovery voltage slope
6
V/ns
Tstg
Storage Temperature
65 to 175
Tj
Max. Operating Junction Temperature
150
(l) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual poloarity of Voltages and current has to be reversed (1) ISD 3A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
DC-DC & DC-AC CONVERTERS DC MOTOR CONTROL (DISK DRIVES, etc.)
STN4NE03 General Description
This Power MOSFET is the latest development ofSTMicroelectronics unique " Single FeatureSize] " strip-based process. The resultingtransistor shows extremely high packing densityfor low on-resistance, rugged avalanche haracteristics and less critical alignment stepstherefore a remarkable manufacturingreproducibility.
STN4NE03 Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 k )
30
V
VGS
Gate- source Voltage
± 20
V
ID(*)
Drain Current (continuos) at TC = 25
4
A
ID(*)
Drain Current (continuos) at TC = 100
2.5
A
IDM()
Drain Current (pulsed)
16
A
PTOT
Total Dissipation at TC = 25
2.5
W
Derating Factor
0.02
W/
dv/dt(1)
Peak Diode Recovery voltage slope
6
mJ
Tstg
Storage Temperature
65 to 150
Tj
Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area (*) Limited by package (1)ISD10A, di/dt 300A/ s, VDD V(BR)DSS, Tj TjMAX