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The device is manufactured in NPN Planar Technology by using a "Base Island" layout.The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.
STN851 Maximum Ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
150
V
VCEO
Collector-Emitter Voltage (IB = 0)
60
V
VEBO
Emitter-Base Voltage (IC = 0)
7
V
IC
Collector Current
5
A
ICM
Collector Peak Current (tp < 5 ms)
10
A
IB
Base Current
1
A
IBM
Base Peak Current (tp < 5 ms)
2
A
Ptot
Total Dissipation at Tamb = 25
1.6
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
STN851 Features
VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED SURFACE-MOUNTING SOT-223 MEDIUM POWER PACKAGE IN TAPE & REEL
STN851 Typical Application
EMERGENCY LIGHTING VOLTAGE REGULATORS RELAY DRIVERS HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS