MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:8000 D/C:TO-
STP11NM60, STP11NM60A, STP11NM60AFP Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 8000
D/C: TO-
Description: MOSFET N-CH 600V 11A TO-220
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PDF/DataSheet Download
Datasheet: STP11NM60
File Size: 561736 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STP11NM60A
File Size: 376784 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP11NM60AFP
File Size: 376784 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STP11NM60 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1000pF @ 25V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STP11NM60 STP11NM60 497 2773 5 ND 49727735ND 497-2773-5 |
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products
| Symbol | Parameter |
Value |
Unit | |
| STP(B)11NM60(-1) | STP11NM60FP | |||
| VDS | Drain-source Voltage (VGS = 0) |
600 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | |
| VGS | Gate- source Voltage |
±30 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
11 |
11(*) |
A |
| ID | Drain Current (continuos) at TC = 100 |
7 |
7(*) |
A |
| IDM(`) | Drain Current (pulsed) |
44 |
44(*) |
A |
| PTOT | Total Dissipation at TC = 25 |
160 |
35 |
W |
| Derating Factor |
1.28 |
0.28 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
20 |
V/ns | |
| VISO | Insulation Winthstand Voltage (DC) |
- |
2500 |
V |
| Tstg | Storage Temperature |
65 to 150 |
||
| Tj |
Max. Operating Junction Temperature |
150
|
||
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
| Technical/Catalog Information | STP11NM60A |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1211pF @ 25V |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 49nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP11NM60A STP11NM60A 497 4368 5 ND 49743685ND 497-4368-5 |
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
| Symbol | Parameter |
Value |
Unit | |
| STP11NM60A STB11NM60A-1 |
STP11NM60AFP | |||
| VDS | Drain-source Voltage (VGS = 0) |
600 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | |
| VGS | Gate- source Voltage |
±30 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
11 |
11(*) |
A |
| ID | Drain Current (continuos) at TC = 100 |
7 |
7(*) |
A |
| IDM(`) | Drain Current (pulsed) |
44 |
44(*) |
A |
| PTOT | Total Dissipation at TC = 25 |
110 |
35 |
W |
| Derating Factor |
0.88 |
0.28 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
20 |
V/ns | |
| VISO | Insulation Winthstand Voltage (DC) |
- |
2500 |
V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
| |
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
| Symbol | Parameter |
Value |
Unit | |
| STP11NM60A STB11NM60A-1 |
STP11NM60AFP | |||
| VDS | Drain-source Voltage (VGS = 0) |
600 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | |
| VGS | Gate- source Voltage |
±30 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
11 |
11(*) |
A |
| ID | Drain Current (continuos) at TC = 100 |
7 |
7(*) |
A |
| IDM(`) | Drain Current (pulsed) |
44 |
44(*) |
A |
| PTOT | Total Dissipation at TC = 25 |
110 |
35 |
W |
| Derating Factor |
0.88 |
0.28 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
20 |
V/ns | |
| VISO | Insulation Winthstand Voltage (DC) |
- |
2500 |
V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
| |
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
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