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STP11NM60FD, STP11NM60FDFP, STP11NM60FDFP-PB FREE

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Info of STP11NM60FD
Info of STP11NM60FDFP
Info of STP11NM60FDFP-PB FREE

STP11NM60FD, STP11NM60FDFP, STP11NM60FDFP-PB FREE Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 220 AB NON ISOL D/C:08+/09+

STP11NM60FD, STP11NM60FDFP, STP11NM60FDFP-PB FREE Datasheet download

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Part Number: STP11NM60FDFP

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO 220 AB NON ISOL

D/C: 08+/09+

Description: MOSFET N-CH 600V 11A TO-220FP

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STP11NM60FD General Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

STP11NM60FD Maximum Ratings

</TABLE

Symbol	Parameter	Value		Unit
Symbol	Parameter	STP11NM60FD STB11NM60FD STB11NM60FD-1	STP11NM60FDFP	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600		V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	600		V
V_GS	Gate- source Voltage	±30		V
I_D	Drain Current (continuos) at T_C = 25	11	11(*)	A
I_D	Drain Current (continuos) at T_C = 100	7	7(*)	A
I_DM(`)	Drain Current (pulsed)	44	44(*)	A
P_TOT	Total Dissipation at T_C = 25	160	35	W
	Derating Factor	0.88	0.28	W/
dv/dt (1)	Peak Diode Recovery voltage slope	20		V/ns
V_ISO	Insulation Winthstand Voltage (DC)	-	2500	V
T_stg	Storage Temperature	65 to 150
T_j	Max. Operating Junction Temperature	65 to 150

(`)Pulse width limited by safe operating area
(1) I_SD 11A, di/dt 400 A/s, V_DD V_(BR)/DSS, T_j T_JMAX
(*) Limited only by maximum temperature allowed

STP11NM60FD Features

` TYPICAL R_DS(on) = 0.40
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
`TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS

STP11NM60FD Typical Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT

STP11NM60FDFP Parameters

Technical/Catalog Information	STP11NM60FDFP
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	450 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	900pF @ 25V
Power - Max	35W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-220-3 Full Pack (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP11NM60FDFP STP11NM60FDFP 497 5392 5 ND 49753925ND 497-5392-5

STP11NM60FDFP General Description

STP11NM60FDFP Maximum Ratings

</TABLE

Symbol	Parameter	Value		Unit
Symbol	Parameter	STP11NM60FD STB11NM60FD STB11NM60FD-1	STP11NM60FDFP	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600		V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	600		V
V_GS	Gate- source Voltage	±30		V
I_D	Drain Current (continuos) at T_C = 25	11	11(*)	A
I_D	Drain Current (continuos) at T_C = 100	7	7(*)	A
I_DM(`)	Drain Current (pulsed)	44	44(*)	A
P_TOT	Total Dissipation at T_C = 25	160	35	W
	Derating Factor	0.88	0.28	W/
dv/dt (1)	Peak Diode Recovery voltage slope	20		V/ns
V_ISO	Insulation Winthstand Voltage (DC)	-	2500	V
T_stg	Storage Temperature	65 to 150
T_j	Max. Operating Junction Temperature	65 to 150

(`)Pulse width limited by safe operating area
(1) I_SD 11A, di/dt 400 A/s, V_DD V_(BR)/DSS, T_j T_JMAX
(*) Limited only by maximum temperature allowed

STP11NM60FDFP Features

STP11NM60FDFP Typical Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT

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