MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:8000 D/C:TO-
STP140NF55, STP140NF75, STP14NF06 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 8000
D/C: TO-
Description: MOSFET N-CH 55V 80A TO-220
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PDF/DataSheet Download
Datasheet: STP140NF55
File Size: 291364 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STP140NF75
File Size: 381522 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP14NF06
File Size: 253618 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STP140NF55 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 40A, 10V |
| Input Capacitance (Ciss) @ Vds | 5300pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 142nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP140NF55 STP140NF55 497 4370 5 ND 49743705ND 497-4370-5 |
This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
55 |
V |
| VGS |
Gate-source Voltage |
±20 |
V |
| ID |
Drain Current (continuous) at Tc = 25 °C |
80 |
A |
| ID |
Drain Current (continuous) at Tc = 100 °C |
80 |
A |
| IDM(•) |
Drain Current (pulsed) |
320 |
A |
| Ptot |
Total Dissipation at Tc = 25 °C |
300 |
W |
|
Derating Factor |
2 |
W/°C | |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
10 |
V/ns |
| EAS(2) |
Single Pulse Avalanche Energy |
1.3 |
mJ |
| Tstg |
Storage Temperature |
-55 to 175 |
°C |
| Tj |
Max. Operating Junction Temperature |
|
TYPE |
VDSS |
RDS(on) |
ID |
|
STB140NF55 STP140NF55 |
55 V 55 V |
< 0.008 < 0.008 |
80 A 80 A |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
| Symbol | Parameter |
Value |
Unit |
| VDS | Drain-source Voltage (VGS = 0) |
75 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
75 |
V |
| VGS | Gate- source Voltage |
±20 |
V |
| ID(**) | Drain Current (continuos) at TC = 25 |
120 |
A |
| ID | Drain Current (continuos) at TC = 100 |
100 |
A |
| IDM() | Drain Current (pulsed) |
480 |
A |
| Ptot | Total Dissipation at TC = 25 |
310 |
W |
| Derating Factor |
2.08 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
10 |
V/ns |
| EAS(2) | Single Pulse Avalanche Energy |
750 |
mJ |
| Tstg | Storage Temperature |
-55 to 175 |
|
| Tj | Operating Junction Temperature |
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
60 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
14 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
10 |
A |
|
IDM(`) |
Drain Current (pulsed) |
56 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
45 |
W |
|
Derating Factor |
0.3 |
W/
| |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
6 |
V/ns |
| EAS (2) | Single Pulse Avalanche Energy | 50 | mJ |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
175 |
|
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