MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:05+ D/C:TO-220
STP20NM60FD, STP20NM60FP, STP20S100 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 05+
D/C: TO-220
Description: MOSFET N-CH 600V 20A TO220FP
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PDF/DataSheet Download
Datasheet: STP20NM60FD
File Size: 417732 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STP20NM60FP
File Size: 363664 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
| Technical/Catalog Information | STP20NM60FD |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 290 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 25V |
| Power - Max | 192W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 37nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP20NM60FD STP20NM60FD 497 5395 5 ND 49753955ND 497-5395-5 |
The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
|
Symbol |
Parameter |
Value |
Unit | ||
| STP20NM60FD | STF20NM60D | STW20NM60FD | |||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | ||
|
VECR |
Drain-gate Voltage (RGS = 20 kW) |
600 |
V | ||
|
VGE |
Gate-Emitter Voltage |
± 30 |
V | ||
|
IC |
Collector Current (continuous) at TC = 25°C |
20 |
20 (*) |
20 |
A |
|
IC |
Collector Current (continuous) at TC = 125°C |
12.6 |
12.6 (*) |
12.6 |
A |
|
ICM(•) |
Collector Current (pulsed) |
80 |
80 (*) |
80 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
192 |
45 |
214 |
W |
| Derating Factor |
1.20 |
0.36 |
1.42 |
W/oC | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
20 |
V/ns | ||
|
VISO |
Insulation Withstand Voltage (DC) |
--
|
2500 |
-- |
V |
|
Tj Tstg |
Storage Temperature Operating Junction Temperature |
65 to 150 |
oC
| ||
ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT
| Technical/Catalog Information | STP20NM60FP |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 290 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 1500pF @ 25V |
| Power - Max | 45W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 54nC @ 10V |
| Package / Case | TO-220-3 Full Pack (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP20NM60FP STP20NM60FP 497 2771 5 ND 49727715ND 497-2771-5 |
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
| Symbol | Parameter |
Value |
Unit | |
| TO-220/D²PAK/ I²PAK/TO-247 |
TO-220FP | |||
| VDS | Drain-source Voltage (VGS = 0) |
600 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | |
| VGS | Gate- source Voltage |
±30 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
20 |
20(*) |
A |
| ID | Drain Current (continuos) at TC = 100 |
12.6 |
12.6(*) |
A |
| IDM(`) | Drain Current (pulsed) |
80 |
80(*) |
A |
| PTOT | Total Dissipation at TC = 25 |
190 |
190 |
W |
| Derating Factor |
1.2 |
0.36 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
15 |
V/ns | |
| VISO | Insulation Winthstand Voltage (DC) |
-- |
2500 |
V |
| Tstg | Storage Temperature |
65 to 150 |
||
| Tj | Max. Operating Junction Temperature |
150 |
||
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
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