MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 220 AB NON ISOL D/C:08+/09+
STP40NF03L, STP40NF10, STP40NF10L Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO 220 AB NON ISOL
D/C: 08+/09+
Description: MOSFET N-CH 100V 40A TO-220
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PDF/DataSheet Download
Datasheet: STP40NF03L
File Size: 86364 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP40NF10
File Size: 366327 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP40NF10L
File Size: 188202 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
| VGS |
Gate-source Voltage |
± 20 |
V |
| ID |
Drain Current (continuous) at Tc = 25 |
40 |
A |
| ID |
Drain Current (continuous) at Tc = 100 |
28 |
A |
| IDM(•) |
Drain Current (pulsed) |
160 |
A |
| Ptot |
Total Dissipation at Tc = 25 |
70 |
W |
|
Derating Factor |
0.46 |
W/ | |
| EAS(1) |
Single Pulse Avalanche Energy |
250 |
m/J |
| Tstg |
Storage Temperature |
-65 to 175 |
|
| Tj |
Max. Operating Junction Temperature |
175 |
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
|
Symbol |
Parameter |
Value |
Unit | |
|
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V | |
|
VDGR |
Drain-gate Voltage (RGS = 20 k ) |
100 |
V | |
|
VGS |
Gate- source Voltage |
±20 |
V | |
|
ID(*) |
Drain Current (continuos) at TC = 25°C |
50 |
A | |
|
ID |
Drain Current (continuos) at TC = 100°C |
35 |
A | |
|
I DM () |
Drain Current (pulsed) |
200 |
A | |
|
PTOT |
Total Dissipation at TC = 25°C |
150 |
W | |
|
Derating Factor |
1 |
W/°C | ||
|
dv/d |
Peak Diode Recovery voltage slope |
20 |
V/ns | |
|
EAS (2) |
Single Pulse Avalanche Energy |
150 |
mJ | |
|
Tstg |
Storage Temperature |
55 to 175 |
||
|
Tj |
Max. Operating Junction Temperature |
°C | ||
| Technical/Catalog Information | STP40NF10L |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 40A |
| Rds On (Max) @ Id, Vgs | 33 mOhm @ 20A, 10V |
| Input Capacitance (Ciss) @ Vds | 2300pF @ 25V |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 64nC @ 5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP40NF10L STP40NF10L 497 6741 5 ND 49767415ND 497-6741-5 |
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 k) |
100 |
V |
|
VGS |
Gate- source Voltage |
± 17 |
V |
|
ID |
Drain Current (continuos) at TC = 25 |
40 |
A |
|
ID |
Drain Current (continuos) at TC = 100 |
25 |
A |
|
IDM (l) |
Drain Current (pulsed) |
160 |
A |
|
Ptot |
Total Dissipation at TC = 25 |
150 |
mW |
| Derating Factor |
1 |
W/ | |
|
EAS (1) |
Single Pulse Avalanche Energy |
430 |
mJ |
|
Tstg |
Storage Temperature |
-65 to 175 |
|
|
Tj |
Max. Operating Junction Temperature |
175 |
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