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TDA21102, TDA21106, TDA2110G

Table of contents:
Info of TDA21102
Info of TDA21106
Info of TDA2110G

TDA21102, TDA21106, TDA2110G Selling Leads, Datasheet

MFG:Infineon Technologies Category:Integrated Circuits (ICs) Package Cooled:SOP14 D/C:09+

TDA21102, TDA21106, TDA2110G Datasheet download

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Part Number: TDA21102

Category: Integrated Circuits (ICs)

MFG: Infineon Technologies

Package Cooled: SOP14

D/C: 09+

Description: IC DRIVER DUAL HS MOSFET PDSO-8

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TDA21102 Parameters

Technical/Catalog Information	TDA21102
Vendor	Infineon Technologies
Category	Integrated Circuits (ICs)
Package / Case	DSO-14
Mounting Type	Surface Mount
Type	High Side
Voltage - Supply	10.8 V ~ 13.2 V
On-State Resistance	-
Current - Output / Channel	4A
Current - Peak Output	4A
Packaging	Tape & Reel (TR)
Input Type	Non-Inverting
Number of Outputs	4
Operating Temperature	-25°C ~ 150°C
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	TDA21102 TDA21102

TDA21102 General Description

The dual high speed driver is designed to drive a wide range of N-Channel low side and N-Channel high side MOSFETs with varying gate charges. It has a small propagation delay from input to output, short rise and fall times and the same pin configuration as the HIP6602B. In addition it provides several protection features as well as a shut down mode for efficiency reasons. The high breakdown voltage makes it suitable for mobile applications.

TDA21102 Maximum Ratings

Parameter	Symbol	Value		Unit
Parameter	Symbol	Min.	Max.	Unit
Voltage supplied to 'VCC' pin	V_VCC	-0.3	25	V
Voltage supplied to 'PVCC' pin	V_PVCC	-0.3	25
Voltage supplied to 'PWM' pin	V_PWM	-0.3	5.5
Voltage supplied to 'BOOT' pin referenced to 'PHASE'	V_BOOT V_PHASE	-0.3	25
Voltage rating at 'PHASE' pin, DC	V_PHASE	-1	25
Voltage rating at 'PHASE' pin, t_{pulse_max} =500ns Max Duty Cycle = 2%		-20	30
Junction temperature	T_J	-25	150
Storage temperature	T_S	-55	150
ESD Rating; Human Body Model			4	kV
IEC climatic category; DIN EN 60068-1		55/150/56		-

TDA21102 Features

• Fast rise and fall times for frequencies up to 2 MHz
• Capable of sinking more than 4 A peak current for lowest switching losses
• Charges the High Side and Low Side MOSFET´s gate to 6..12 V according to PVCC setting.
• Adjustable High Side and Low Side MOSFET gate drive voltage via PVCC pin for optimizing ON losses and gate drive losses
• Integrates the bootstrap diode for reducing the part count
• Prevents from cross-conducting by adaptive gate drive control
• High voltage rating on Phase node
• Supports shut-down mode for very low quiescent current through three-state input
• Compatible to standard PWM controller ICs (Intersil, Analog Devices)
• Floating High Side MOSFET drive
• Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s

TDA21102 Connection Diagram

TDA21106 Parameters

Technical/Catalog Information	TDA21106
Vendor	Infineon Technologies
Category	Integrated Circuits (ICs)
Configuration	High and Low Side, Synchronous
Voltage - Supply	10.8 V ~ 13.2 V
Current - Peak	4A
Delay Time	20ns
Package / Case	DSO-8
Packaging	Tape & Reel (TR)
Number of Outputs	2
Input Type	PWM
Number of Configurations	1
Operating Temperature	-25°C ~ 150°C
High Side Voltage - Max (Bootstrap)	30V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	TDA21106 TDA21106

TDA21106 General Description

The dual high speed driver is designed to drive a wide range of N-Channel low side and N-Channel high side MOSFETs with varying gate charges. It has a small propagation delay from input to output, short rise and fall times and the same pin configuration to be compatible to TDA21101G and HIP6601B. In addition it provides protection features as well as a three-state mode for efficiency reasons. The high breakdown voltage makes it suitable for mobile applications.

TDA21106 Maximum Ratings

Parameter	Symbol	Value		Unit
Parameter	Symbol	Min.	Max.	Unit
Voltage supplied to 'VCC' pin;DC	V_VCC	-0.3	25	V
Voltage supplied to 'PVCC' pin;DC	V_PVCC	-0.3	25
Voltage supplied to 'PWM' pin	V_PWM	-0.3	5.5
Voltage supplied to 'BOOT' pin referenced to 'PHASE'	V_BOOT V_PHASE	-0.3	25
Voltage supplied to 'BOOT' pin referenced to 'GND'	V_BOOT	-0,3	45
Voltage rating at 'PHASE' pin, DC	V_PHASE	-1	25
Voltage rating at 'PHASE' pin, tpulse_max =500ns Max Duty Cycle = 2%		-20	30
Voltage supplied to GATEHS pin referenced to 'PHASE' Tpulse_max < 100ns, Energy < 2uJ	V_GATEHS	-3.5	VBOOT +0.3
Voltage supplied to GATELS pin referenced to 'GND' Tpulse_max < 100ns, Energy < 2uJ	V_GATELS	-5	VVCC +0.3
Junction temperature	T_J	-25	150
Storage temperature	T_S	-55	150
ESD Rating; Human Body Model			4	kV
IEC climatic category; DIN EN 60068-1		55/150/56		-

TDA21106 Features

• Fast rise and fall times for frequencies up to 2 MHz
• Capable of sinking more than 4A peak currents for lowest switching losses
• Charges High Side MOSFET gate drive voltage from 6 to 12V according to PVCC setting; Low Side MOSFET at 12 V.
• Adjustable High Side MOSFET gate drive voltage via PVCC pin for optimizing ON losses and gate drive losses
• Integrates the bootstrap diode for reducing the part count
• Prevents from cross-conducting by adaptive gate drive control
• High voltage rating on Phase node
• Supports shut-down mode for very low quiescent current through three-state input
• Compatible to standard PWM controller ICs (Intersil, Analog Devices)
• Floating High Side MOSFET drive
• Footprint compatible to TDA21101G and HIP6601B
• Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s

TDA21106 Connection Diagram

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