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TPDV1040, TPDV1240RG, TPDV625

Table of contents:
Info of TPDV1040
Info of TPDV1240RG
Info of TPDV625

TPDV1040, TPDV1240RG, TPDV625 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:sgs D/C:dc98

TPDV1040, TPDV1240RG, TPDV625 Datasheet download

Five Points

Part Number: TPDV1240RG

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: sgs

D/C: dc98

Description: ALTERNISTOR 1200V TOP3

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TPDV1040 General Description

The TPDV 640 ---> 1240 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...)

TPDV1040 Maximum Ratings

Symbol	Parameter		Value	Unit
I_T(RMS)	RMS on-state current (360° conduction angle)	Tc = 75 °C	40	A
ITSM	Non repetitive surge peak on-state current ( Tj initial = 25°C )	tp = 2.5 ms	590	A
		tp = 8.3 ms	370
		tp = 10 ms	350
I²t	I²t value	tp = 10 ms	610	A2s
dI/dt	Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/s	Repetitive F = 50 Hz	20	A/ms
dI/dt		Non Repetitive	100	A/ms
Tstg Tj	Storage and operating junction temperature range		- 40 to + 150 - 40 to + 125	°C °C
T_l	Maximum lead temperature for soldering during 10 s at 4.5 mm from case		260	°C

TPDV1040 Features

·HIGH COMMUTATION : > 142A/ms (400Hz)
·INSULATING VOLTAGE = 2500V_(RMS)(UL RECOGNIZED : EB81734)
·HIGH VOLTAGE CAPABILITY : V_DRM = 1200 V

TPDV1240RG Parameters

Technical/Catalog Information	TPDV1240RG
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Triac Type	Alternistor - Snubberless
Configuration	Single
Voltage - Off State	1200V (1.2kV)
Current - On State (It (RMS) (Max)	40A
Voltage - Gate Trigger (Vgt) (Max)	1.5V
Current - Gate Trigger (Igt) (Max)	200mA
Current - Hold (Ih) (Max)	50mA
Current - Non Rep. Surge 50, 60Hz (Itsm)	350A, 370A
Mounting Type	Through Hole
Package / Case	TOP-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPDV1240RG TPDV1240RG 497 3794 5 ND 49737945ND 497-3794-5

TPDV625 General Description

The TPDV625 ---> TPDV1225 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...)

TPDV625 Maximum Ratings

Symbol	Parameter		Value	Unit
I_T(RMS)	RMS on-state current (360° conduction angle)	Tc= 85	25	A
I_TSM	Non repetitive surge peakon-state current ( Tj initial = 25)	tp = 2.5ms	390	A
		tp = 8.3ms	250
		tp = 10ms	230
I²t	I2t Value	tp = 10 ms	265	A²S
dI/dt	Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/ms.	Repetitive F = 50 Hz	20	A/µs
		Non Repetitive	100
T_stgT_j	Storage and operating junction temperature range		-40 to +150 -40 to +125
T_l	Maximum lead temperature for soldering during 10s at 4.5 mm from case		260

TPDV625 Features

· High commutation: > 88A/ms (400Hz)
· Insulating voltage = 2500V_(RMS) (UL Recognized: EB81734)
· High voltage capability: V_DRM = 1200V

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