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V1014-G631, V10150C, V10150S

V1014-G631, V10150C, V10150S Selling Leads, Datasheet

MFG:Vishay  Package Cooled:TO-220AB  D/C:98

V1014-G631, V10150C, V10150S Picture

V1014-G631, V10150C, V10150S Datasheet download

Five Points

Part Number: V1014-G631

 

MFG: Vishay

Package Cooled: TO-220AB

D/C: 98

 

 

 
 
 
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About V1000LA160B

PDF/DataSheet Download

Datasheet: V1000LA160B

File Size: 405779 KB

Manufacturer: LITTELFUSE [Littelfuse]

Download : Click here to Download

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About V1000LA160B

PDF/DataSheet Download

Datasheet: V1000LA160B

File Size: 405779 KB

Manufacturer: LITTELFUSE [Littelfuse]

Download : Click here to Download

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  • V10101BQB

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  • V10165BQZ

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  • V10178BQB

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  • V10178BQC

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  • V103199BQ2

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  • V10319BQZ

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  • V10337BQZ

  • D/C: 04+&   Adddate: 2024-04-19
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About V1000LA160B

PDF/DataSheet Download

Datasheet: V1000LA160B

File Size: 405779 KB

Manufacturer: LITTELFUSE [Littelfuse]

Download : Click here to Download

Related PDF Download

Related Part Number

V10150C General Description

V10150C, VF`10150C, VB10150C & VI10150C datasheet

V10150C Maximum Ratings

PARAMETER SYMBOL V40150C VF40150C VB40150C VI40150C UNIT
Maximum repetitive peak reverse voltage VRRM 150 V
Maximum average forward rectified current
(Fig. 1)per device
per diode
IF(AV) 10
5
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM 60 A
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
VAC 1500 V
Operating junction and storage temperature range TJ, TSTG - 55 to + 150

V10150C Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power osses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF aximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB nd TO-262AA package)
• Component in accordance to RoHS 2002/95/EC nd WEEE 2002/96/EC

V10150C Typical Application

For use in high frequency inverters, switching power upplies, freewheeling diodes, OR-ing diode, dc-to-dc onverters and reverse battery protection.

V10150S Maximum Ratings

PARAMETER SYMBOL V10150S VF10150S VB10150S VI10150S UNIT
Maximum repetitive peak reverse voltage VRRM 150 V
Maximum average forward rectified current
(Fig. 1)
IF(AV) 10 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM 120 A
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
VAC 1500 V
Operating junction and storage temperature range TJ, TSTG - 40 to + 150

V10150S Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

V10150S Typical Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

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