UNNEUTRAIZED_MOS_FET

Published:2009/7/10 1:40:00 Author:May | From:SeekIC

Low draim-gate capacitance is needed for high power gains above 2 Mc from common-source mos fet.-G.G.Luettgenau and S. H. Barnes, Designing With Low-Noise MOS FETs: A Little Different But No Harder, Electronics, 37:31, p 53-58.



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