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0809LD120

SpecificationsPower DissipationDevice Dissipation @25°C (Pd) 300 WThermal Resistance (JC) .6°C/WVoltage and CurrentDrain-Source (VDSS) 65VGate-Source (VGS) ±20VTemperaturesStorage Temperature-65 to +200°COperating Junction Temperature+200°CDescriptionThe 0809LD120 is a common source N-Channel enha...

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SeekIC No. : 004206330 Detail

0809LD120: SpecificationsPower DissipationDevice Dissipation @25°C (Pd) 300 WThermal Resistance (JC) .6°C/WVoltage and CurrentDrain-Source (VDSS) 65VGate-Source (VGS) ±20VTemperaturesStorage Temperature-65 to ...

0809LD120 Data Sheet

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Part Number:
0809LD120
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Power Dissipation
Device Dissipation @25°C (Pd)                    300 W
Thermal Resistance (JC)                           .6°C/W
Voltage and Current
Drain-Source (VDSS)                                         65V
Gate-Source (VGS)                                         ±20V
Temperatures
Storage Temperature                     -65 to +200°C
Operating Junction Temperature               +200°C


Description

The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness.




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