1N5811

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: -
Reverse Recovery Time (trr): 30ns
Current - Average Rectified (Io): 6A
Voltage - DC Reverse (Vr) (Max): 150V
Current - Reverse Leakage @ Vr: 5µA @ 150V
Manufacturer: Microsemi Commercial Components Group
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Package / Case: E, Axial
Supplier Device Package: E-PAK


Features:

· Chip Outline Dimensions: 68 x 68 mils
· Chip Thickness: 8 to 12 mils
· Anode Metallization: Aluminum
· Metallization Thickness: 70,000Ã Nominal
· Bonding Area: 42 x 42 mils Min.
· Back Metallization: Gold-3000Ã Nominal
· Junction Passivated with Thermal Silicon Dioxide - Planar Design
· Backside Available with Solderable Ag Backside as JANHCF or JANKCF


Parameters:

Technical/Catalog Information	1N5811
Vendor	Microsemi
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	150V
Current - Average Rectified (Io)	6A
Voltage - Forward (Vf) (Max) @ If	875mV @ 4A
Reverse Recovery Time (trr)	30ns
Current - Reverse Leakage @ Vr	5A @ 150V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Axial
Package / Case	Axial
Packaging	Tape & Reel (TR)
Capacitance @ Vr, F	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	1N5811 1N5811 1N5811TR ND 1N5811TRND 1N5811TR