28F008S3

` SmartVoltage Technology
- 2.7 V (Read-Only) or 3.3 V V<sub>CC</sub> and 3.3 V or 12 V V<sub>PP</sub>
` High-Performance
- 120 ns Read Access Time
` Enhanced Data Protection Features
- Absolute Protection with V<sub>PP</sub> = GND
- Flexible Block Locking
- Block Write Lockout during Power Transitions
` Enhanced Automated Suspend Options
- Program Suspend to Read
- Block Erase Suspend to Program
- Block Erase Suspend to Read
` Industry-Standard Packaging
- 40-Lead TSOP, 44-Lead PSOP
` High-Density 64-Kbyte Symmetrical Erase Block Architecture
- 4 Mbit: Eight Blocks
- 8 Mbit: Sixteen Blocks
- 16 Mbit: Thirty-Two Blocks
`Extended Cycling Capability
- 100,000 Block Erase Cycles
` Low Power Management
- Deep Power-Down Mode
- Automatic Power Savings Mode Decreases I_CC in Static Mode
` Automated Program and Block Erase
- Command User Interface
- Status Register
` SRAM-Compatible Write Interface
` ETOX™ V Nonvolatile Flash Technology

Temperature under Bias...............10 °C to +80 °C
Storage Temperature ............... 65 °C to +125 °C
Voltage On Any Pin
(except V_PP, and RP#)..................2.0 V to +7.0 V⁽²⁾
V_PP Voltage .............................2.0 V to +14.0 V^(1,2)
RP# Voltage.......................... 2.0 V to +14.0 V^(1,2,4)
Output Short Circuit Current ...................... 100 mA<sup>(3)

NOTES:
1. All specified voltages are with respect to GND. Minimum DC voltage is 0.5 V on input/output pins and 0.2 V on V_CC, RP#, and V_PP pins. During transitions, this level may undershoot to 2.0 V for periods <20 ns. Maximum DC voltage on input/output pins and V_CC is VCC +0.5 V which, during transitions, may overshoot to V_CC +2.0 V for periods <20 ns.
2. Maximum DC voltage on VPP and RP# may overshoot to +14.0 V for periods <20 ns.
3. Output shorted for no more than one second. No more than one output shorted at a time.
4. RP# voltage is normally at V_IL or V_IH. Connection to supply of V_HH is allowed for a maximum cumulative period of 80 hours.</sup>