Purchase 2N3019DCSM, In-stock 2N3019DCSM From SeekIC.
- Table of contents:
2N3019DCSM
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Suppliers
DataSheet
General Description
2N3019DCSM Maximum Ratings
| VCBO VCEO VEBO IC PD PD RJA Tj Tstg |
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature |
140V 80V 7V 1A | |
|
350mW 2.33mW/°C 429°C/W |
500mW 3.33mW/°C 300°C/W | ||
|
200°C | |||
|
55°C to 200°C | |||
2N3019DCSM Features
• SILICON PLANAR EPITAXIAL NPN TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT PACKAGE
• CECC SCREENING OPTIONS AVAILABLE
• SPACE QUALITY LEVELS AVAILABLE
• HIGH SPEED SATURATED SWITCHING
• HERMETIC CERAMIC SURFACE MOUNT PACKAGE
• CECC SCREENING OPTIONS AVAILABLE
• SPACE QUALITY LEVELS AVAILABLE
• HIGH SPEED SATURATED SWITCHING
2N3019DCSM Typical Application
For high reliablitity general purpose applications requiring small size and low weight devices.
2N3001
PDF/DataSheet Download
- Datasheet: 2N3001
- File Size: 22768 KB
- Manufacturer: CENTRAL [Central Semiconductor Corp]
- Click here to Download
- ·2N3002
- CENTRAL [Central Semiconductor Corp]
- 0.8 to 110 Amperes RMS 15 to 1200 Volts
- 22768 KB
- ·2N3003
- CENTRAL [Central Semiconductor Corp]
- 0.8 to 110 Amperes RMS 15 to 1200 Volts
- 32310 KB
- ·2N3004
- CENTRAL [Central Semiconductor Corp]
- 0.8 to 110 Amperes RMS 15 to 1200 Volts
- 22768 KB
- ·2N3005
- CENTRAL [Central Semiconductor Corp]
- 0.8 to 110 Amperes RMS 15 to 1200 Volts
- 22768 KB
- ·2N3006
- CENTRAL [Central Semiconductor Corp]
- 0.8 to 110 Amperes RMS 15 to 1200 Volts
- 22768 KB
- ·2N3007
- CENTRAL [Central Semiconductor Corp]
- 0.8 to 110 Amperes RMS 15 to 1200 Volts
- 32310 KB
- ·2N3008
- CENTRAL [Central Semiconductor Corp]
- 0.8 to 110 Amperes RMS 15 to 1200 Volts
- 22768 KB
- ·2N3009
- CENTRAL [Central Semiconductor Corp]
- NPN SILICON HIGH SPEED SWITCHING TRANSISTORS
- 81193 KB
2N3019DCSM Relative Products
2N3019CSM
2N3019CSM, HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
2N3019
The 2N3019 is a kind of NPN silicon planar epitaxial transistor. It is designed for AF medium power drivers, outputs and switching applications up to 1 Ampere. It is complementory to the PNP 2N4031. The following is about the absolute maximum ratings of 2N3...
2N2993
All Semelab hermetically sealed products can be processed in accordance with the requirements of 2N2993, CECC and JAN, JANTX, JANTXV and JANS specifications
2N2955
The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
2N2925
2N2924
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