2N3054

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Application

·Designed for general purpose switching and amplifier applications




Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage		Open emitter	90	V
VCEO	Collector-emitter voltage		Open base	55	V
VEBO	Emitter-base voltage		Open collector	7	V
IC	Collector current			4	A
IB	Base current			2	A
PD	Power dissipation	2N3054	TC=25	25	W
		2N3054A		75
Tj	Junction temperature			200
Tstg	Storage temperature			-65~200

Description

The 2N3054 is designed as one kind of NPN silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose switching and amplifier applications.

Some absolute maximum ratings of 2N3054 have been concluded into several points as follow. (1)Its collector to base voltage would be 90V. (2)Its collector to emitter voltage Vcev would be 90V. (3)Its collector to emitter voltage Vcer would be 60V. (4)Its collector to emitter voltage Vceo would be 55V. (5)Its emitter to base voltage would be 7.0V. (6)Its collector current would be 4.0A. (7)Its base current would be 2.0A. (8)Its power dissipation would be 25W. (9)Its operating temperature range would be from -65°C to 200°C. (10)Its storage temperature range would be from -65°C to 200°C. (11)Its thermal resistance would be 7.0°C/W. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2N3054 are concluded as follow. (1)Its collector to emitter current Icev would be max 1.0mA with conditions of Vce=90V and Veb(off)=1.5V. (2)Its collector to emitter current Icev would be max 6.0mA with conditons of Vce=90V and Veb(off)=1.5V and Tc=150°C. (3)Its collector to emitter current Iceo would be max 500uA with conditions of Vce=30V. (4)Its emitter to base current Iebo would be max 1.0mA. (5)Its collector to emitter breakdown voltage BVceo would be min 55V with conditions of Ic=100mA. (6)Its collector to emitter breakdown voltage BVcer would be min 60V with conditions of Ic=100mA and Rbe=100ohms. (7)Its Vce(sat) would be max 1.0V with conditions of Ic=100mA and Ib=50mA and would be max 6.0V with conditions of Ic=3.0A and Ib=500mA. (8)Its Vbe(on) would be max 1.7V with conditions of Vce=4.0V and Ic=500mA. And so on. If you have any question or suggestion or want to know more information of 2N3054 please contact us for details. Thank you!

·With TO-66 package