2N3055H

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 20
Maximum Operating Frequency : 2.5 MHz (Min)
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray


Application

·Designed for general-purpose switching and amplifier Applications.




Specifications

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	100	V
VCER	Collector-Emitter Voltage	70	V
VCEO	Collector-Emitter Voltage	100	V
VEBO	Emitter-Base Voltage	7	V
IC	Collector Current-Continuous	15	A
IB	Base Current	7	A
PC	Collector Power Dissipation@TC=25	115	W
TJ	Junction Temperature	200	°C
Tstg	Storage Temperature	-65~200	°C

Description

2N3055H specifications:

·Excellent Safe Operating Area
·DC Current Gain-h_FE=20-70@I_C = 4A
·Collector-Emitter Saturation Voltage-: V_CE(sat)= 1.1 V(Max)@ I_C = 4A

Parameters:

Technical/Catalog Information	2N3055H
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	15A
Power - Max	115W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 400mA, 4A
Frequency - Transition	-
Current - Collector Cutoff (Max)	700A
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N3055H 2N3055H