2N3442

Configuration :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 20
Maximum DC Collector Current : 10 A
Collector- Emitter Voltage VCEO Max : 140 V
Package / Case : TO-3
Packaging : Sleeve
Maximum Operating Frequency : 0.08 MHz


Specifications

Parameter	Symbol	Rating	Unit
Collector to base voltage	VCBO	140	Vdc
Collector to emitter voltage	VCEO	160	Vdc
Collector-Emitter Voltage	VCER	150	Vdc
Emitter-Base Voltage	VEBO	7.0	Vdc
Base Current	IB	7.0	Adc
Collector current	IC	10	Adc
Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2)	PT	6.0	W
		117	W
Operating & Storage Junction Temperature Range	Tstg,Tj	-55 to +200	°C

1) Derate linearly 34.2 mW/⁰C for T_A > 25⁰C
2) Derate linearly 668 mW/⁰C for T_C > 25⁰C




Parameters:

Technical/Catalog Information	2N3442
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	140V
Current - Collector (Ic) (Max)	10A
Power - Max	117W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	5V @ 2A, 10A
Frequency - Transition	80MHz
Current - Collector Cutoff (Max)	200mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N3442 2N3442