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Part Number: 2N3506AL

 

 

 

 

Description: Semicoa Semiconductors offers:• Screening and processing per MIL-PRF-19500 Appendix E...


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2N3506AL General Description


Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3506ALJ)
• JANTX level (2N3506ALJX)
• JANTXV level (2N3506ALJV)
• JANS level (2N3506ALJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS
• Radiation testing (total dose) upon request

2N3506AL Maximum Ratings

Parameter

Symbol

Rating

Unit

Collector-Emitter Voltage

VCEO

40

Volts

Collector-Base Voltage

VCBO

60

Volts

Emitter-Base Voltage

VEBO

5

Volts

Collector Current,Continuous

IC

3

A

Power Dissipation, TA = 25
Derate linearly above 25

PT

1
5.71

W
mW/

Power Dissipation, TC = 25
Derate linearly above 25

PT

5
28.6

W
mW/

Thermal Resistance

 

175

/W

Operating Junction Temperature

TJ

-65 to +200

Storage Temperature

TSTG

-65 to +200

2N3506AL Features

• Hermetically sealed TO-5 metal can
• Also available in chip configuration
• Chip geometry 1506
• Reference document: MIL-PRF-19500/349

2N3506AL Typical Application

• General purpose switching transistor
• Low power
• NPN silicon transistor

2N3506AL datasheet

2N3001
PDF/DataSheet Download

  • Datasheet: 2N3001
  • File Size: 22768 KB
  • Manufacturer: CENTRAL [Central Semiconductor Corp]
  • Click here to Download

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    Semicoa Semiconductors offers:• Screening and processing per MIL-PRF-19500 Appendix E• JAN level (2N3506AJ)• JANTX level (2N3506AJX)• JANTXV level (2N3506AJV)• JANS level (2N3506AJS)• QCI to the applicable level• 100...

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