2N3663

Configuration : Single
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Package / Case : TO-92
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 12 V
Continuous Collector Current : 0.05 A
Emitter- Base Voltage VEBO : 3 V
Power Dissipation : 350 mW
Maximum Operating Frequency : 2100 MHz


Specifications

T_A = 25°C unless otherwise noted

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	12	V
VCBO	Collector-Base Voltage	30	V
VEBO	Emitter-Base Voltage	3.0	V
IC	Collector Current - Continuous	50	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Description

    The 2N3663 is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics.

Parameters:

Technical/Catalog Information	2N3663
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Frequency - Transition	2.1GHz
Noise Figure (dB Typ @ f)	6.5dB @ 60MHz
Current - Collector (Ic) (Max)	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 8mA, 10V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Gain	1.5dB
Power - Max	350mW
Compression Point (P1dB)	-
Package / Case	TO-92
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N3663 2N3663