Features: • Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 0806• Reference document:MIL-PRF-19500/395Application• General purpose• Low power• NPN silicon transistorSpecifications Characteristics Symbol Rating...
2N3737UB: Features: • Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 0806• Reference document:MIL-PRF-19500/395Application• General purpo...
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| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 40 | Volts |
| Collector-emitter voltage | VCEO | 75 | Volts |
| Emitter-base voltage | VEBO | 5 | Volts |
| Collector current | IC | 1.5 | A |
| Power Dissipation, TC = 25 Derate linearly above 37.5 |
PT | 0.5 3.07 |
W mW/ |
| Thermal Resistance | RRJA | 325 | /W |
| Operating Junction Temperature | TJ | -65 to +200 | |
| Storage Temperature | Tstg | -65 to +200 |