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Part Number: 2N3762

 

 

 

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2N3762 Maximum Ratings

Ratings

Symbol

2N3762*
2N3764

2N3763*
2N3765

Unit

Collector-Emitter Voltage

VCEO

40

60

  Vdc
Collector-Base Voltage

VCEO

40

60

 Vdc

Emitter-Base Voltage

VEBO

5.0

 Vdc

Collector Current

IC

1.5

 Adc

 

2N3762* 1
2N3763*

2N3764 2
2N3765

  
Total Power Dissipation @ TA = +250C

PT

1.0

0.5

W

Operating & Storage Junction Temp. Range

Top, Tstg

-55 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

 

2N3762*
2N3763*

2N3764
2N3765

  
Thermal Resistance Junction-to-Case

RqJC

60

88

0C/W

*Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices
1) Derate linearly at 5.71 mW/0C for TA > +250C
2) Derate linearly at 2.86 mW/0C for TA > +250C

2N3762 datasheet

2N3762
PDF/DataSheet Download

  • Datasheet: 2N3762
  • File Size: 62940 KB
  • Manufacturer: CENTRAL [Central Semiconductor Corp]
  • Click here to Download

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