2N5192

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Maximum DC Collector Current : 4 A
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
DC Collector/Base Gain hfe Min : 20
Collector- Emitter Voltage VCEO Max : 80 V
Package / Case : SOT-32


Features:

The 2N5191 and 2N5192 are silicon epitaxial-base NPN transistors in Jedec SOT-32 plastic package.

They are inteded for use in medium power linear and switching applications.

The complementary PNP type of 2N5192 is 2N5195.

Application

· LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT




Specifications

SYMBOL	PARAMETER	2N5191	2N5192	UNIT
VCBO	Collector to base voltage(IE = 0)	60	80	V
VCEO	Collector to emitter voltage(IB = 0)	60	80	V
VEBO	Emitter to base voltage(IC = 0)	5	5	V
IC	Collector current	4	4	A
ICM	Collector Peak Current	7	7	A
IB	Base current	1	1	A
Ptot	Total Dissipation at Tc 25 oC	40	40	W
Tj	Junction temperature	150	150
Tstg	Storage temperaturerange	-65 to +150	-65 to +150

Parameters:

Technical/Catalog Information	2N5192
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	4A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 10.5A, 2V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 1A, 4A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5192 2N5192 497 2591 5 ND 49725915ND 497-2591-5