2N5307

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Maximum Operating Temperature : + 150 C
Collector- Base Voltage VCBO : 40 V
Maximum Collector Cut-off Current : 0.1 uA
Maximum DC Collector Current : 1.2 A
Package / Case : TO-92
Emitter- Base Voltage VEBO : 12 V
Collector- Emitter Voltage VCEO Max : 40 V


Features:

• This device designed for applications requiring extremely high current
gain at currents to 1.0A.
• Sourced from Process 05.
• See MPSA14 for characteristics.




Specifications

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-base voltage	1200	V
VCEO	Collector-emitter voltage	800	V
VEBO	Emitter-base voltage	7	V
IC	Collector Current-Continuous	3	A
Tj,TST	Operating and Storage Junction Temperature Range	-55 ~ +150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations




Parameters:

Technical/Catalog Information	2N5307
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	1.2A
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 200A, 200mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5307 2N5307