2N5322

Configuration :
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 30
Packaging : Bulk
Maximum DC Collector Current : 2 A
Maximum Operating Frequency : 5 MHz
Package / Case : TO-39
Collector- Emitter Voltage VCEO Max : 75 V


Features:

·SILICON EPITAXIAL PLANAR PNP TRANSISTORS
·MEDIUM POWER AMPLIFIER
·NPN COMPLEMENTS ARE 2N5320 AND 2N5321


Specifications

Symbol	Parameter	Value		Unit
		2N5322	2N5323
VCBO VCEV VCEO VEBO IC ICM IB Ptot Ptot Tstg, Tj	Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tamb = 25 oC Total Dissipation at Tc = 25 oC Storage and Junction Temperature	-100 -100 -75 -6	-75 -75 -50 -5	V V V V A A A W W oC
		-1.2 -2 -1 1 10 -65 to 200

Description

The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary NPN types are respectively the 2N5320 and 2N5321