Position: Home  > All Categories> Integrated Circuits (ICs) > 2N5655

2N5655

Transistors Bipolar (BJT) 1A 250V 20W NPN

product image

2N5655 Picture
See larger image
SeekIC No. : 00213495 Detail

2N5655: Transistors Bipolar (BJT) 1A 250V 20W NPN

2N5655 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
2N5655
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 250 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 25 Configuration : Single
Maximum Operating Frequency : 10 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-225
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
DC Collector/Base Gain hfe Min : 25
Maximum DC Collector Current : 0.5 A
Maximum Operating Frequency : 10 MHz (Min)
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 250 V
Package / Case : TO-225


Specifications

Rating Symbol 2N5655 2N5656 2N5657 Unit
CollectorEmitter Voltage VCEO 250 300 350 Vdc
CollectorBase Voltage VCB 275 325 375 Vdc
EmitterBase Voltage VEB 6.0 6.0 6.0 Vdc
Collector Current - Continuous
Peak		 IC 0.5
1.0		 0.5
1.0		 0.5
1.0		 Adc
Base Current IB 0.25 0.25 0.25 Adc
Total Device Dissipation @ TC = 25
Derate above 25		 PD 20
0.16		 20
0.16		 20
0.16		 Watts
W/
Operating and Storage Junction
Temperature Range		 TJ, Tstg 65 to +200 65 to +150





Parameters:

Technical/Catalog Information2N5655
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)250V
Current - Collector (Ic) (Max)500mA
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 100mA, 10mV
Vce Saturation (Max) @ Ib, Ic1V @ 10mA, 100mA
Frequency - Transition10MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-225-3
PackagingBulk
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2N5655
2N5655
2N5655OS ND
2N5655OSND
2N5655OS



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Resistors
A101G
3006P-1-205LF
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Integrated Circuits (ICs)
TA8435H
1MB12-140
View more