2N5655

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
DC Collector/Base Gain hfe Min : 25
Maximum DC Collector Current : 0.5 A
Maximum Operating Frequency : 10 MHz (Min)
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 250 V
Package / Case : TO-225


Specifications

Rating	Symbol	2N5655	2N5656	2N5657	Unit
CollectorEmitter Voltage	VCEO	250	300	350	Vdc
CollectorBase Voltage	VCB	275	325	375	Vdc
EmitterBase Voltage	VEB	6.0	6.0	6.0	Vdc
Collector Current - Continuous Peak	IC	0.5 1.0	0.5 1.0	0.5 1.0	Adc
Base Current	IB	0.25	0.25	0.25	Adc
Total Device Dissipation @ TC = 25 Derate above 25	PD	20 0.16	20 0.16	20 0.16	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +200		65 to +150

Parameters:

Technical/Catalog Information	2N5655
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	500mA
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 100mA, 10mV
Vce Saturation (Max) @ Ib, Ic	1V @ 10mA, 100mA
Frequency - Transition	10MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N5655 2N5655 2N5655OS ND 2N5655OSND 2N5655OS