Maximum Collector Cut-off Current
: 500 uA
Transistor Polarity
: PNP
Mounting Style
: Through Hole
Configuration
: Single
Emitter- Base Voltage VEBO
: 5 V
Maximum DC Collector Current
: 4 A
Power Dissipation
: 40 W
Maximum Operating Temperature
: + 150 C
Collector- Base Voltage VCBO
: 40 V
Collector- Emitter Voltage VCEO Max
: 40 V
Package / Case
: TO-126
Packaging
: Box
Features: ·ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V
·Epoxy Meets UL 94 V−0 @ 0.125 in
·Pb−Free Packages are Available*
Specifications
|
Rating |
Symbol |
Value |
Unit |
Collector−Emitter Voltage 2N6034
2N6035, 2N6038
2N6036, 2N6039 |
VCEO |
40
60
80 |
Vdc |
Collector−Base Voltage 2N6034
2N6035, 2N6038
2N6036, 2N6039 |
VCBO |
40
60
80 |
Vdc |
| Emitter−Base Voltage |
VEBO |
5.0 |
Vdc |
Collector Current Continuous
Peak |
IC |
4.0
8.0 |
Adc
Apk |
| Base Current |
IB |
100 |
mAdc |
Total Device Dissipation @ TC = 25
Derate above 25 |
PD |
40
320 |
W
mW/ |
Total Device Dissipation @ TC = 25
Derate above 25 |
PD |
1.5
12 |
W
mW/ |
Operating and Storage Junction
Temperature Range |
TJ, Tstg |
65 to
+150 |
|
DescriptionPlastic Darlington complementary silicon power transistors 2N6034 are designed for general purpose amplifier and low−speed switching applications.
Parameters: | Technical/Catalog Information | 2N6034 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Current - Collector (Ic) (Max) | 4A |
| Power - Max | 40W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 8mA, 2A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 100A |
| Mounting Type | Through Hole |
| Package / Case | TO-225-3 |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | 2N6034
2N6034
2N6034OS ND
2N6034OSND
2N6034OS
|
2N6034 Data Sheet
