2N6038

Transistor Polarity : NPN
Maximum Collector Cut-off Current : 500 uA
Mounting Style : Through Hole
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 4 A
Power Dissipation : 40 W
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 60 V
Collector- Base Voltage VCBO : 60 V
Package / Case : TO-126
Packaging : Box


Application

·Designed for general-purpose amplifier and low-speed switching applications




Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	2N6037	Open emitter	40 60 80	V
		2N6038
		2N6039
VCEO	Collector -emitter voltage	2N6037	Open base	40 60 80	V
		2N6038
		2N6039
VEBO	Emitter-base voltage		Open collector	5	V
IC	Collector current			4	A
ICM	Collector current-Pulse			8	A
IB	Base current			0.1	A
PD	Collector power dissipation		TC=25	40	W
Tj	Junction temperature			150
Tstg	Storage temperature			-65~150

Description

·With TO-126 package
·Complement to type 2N6034/6035/6036
·DARLINGTON
·High DC current gain
2N6038



Parameters:

Technical/Catalog Information	2N6038
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	4A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 2A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 8mA, 2A
Frequency - Transition	-
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6038 2N6038 2N6038OS ND 2N6038OSND 2N6038OS