2N6045

Transistor Polarity : NPN
Mounting Style : Through Hole
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : TO-220
Maximum Collector Cut-off Current : 20 uA
Power Dissipation : 75 W
Maximum DC Collector Current : 10 A
Packaging : Box


Application

·For general-purpose amplifier and low-speed switching applications




Specifications

SYMBOL			CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	2N6043	Open emitter	60	V
		2N6043		80
		2N6044		100
VCEO	Collector-emitter voltage	2N6045	Open base	60	V
		2N6044		80
		2N6045		100
VEBO	Emitter -base voltage		Open collector	5	V
IC	Collector current (DC)			8	A
IB	Base current-DC			120
ICM	Collector current-Peak			16	A
PD	Total power dissipation		TC=25	75	W
			Ta=25	2.2	W
Tj	Junction temperature			150
Tstg	Storage temperature			-65~150

Description

·With TO-220C package
·Complement to type 2N6040/6041/6042
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
2N6045



Parameters:

Technical/Catalog Information	2N6045
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	8A
Power - Max	75W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	2V @ 12mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	20A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6045 2N6045 2N6045OS ND 2N6045OSND 2N6045OS