2N6075B

On-State RMS Current (It RMS) :
Rated Repetitive Off-State Voltage VDRM : 600 V
Mounting Style : Through Hole
Holding Current (Ih Max) : 15 mA
Gate Trigger Current (Igt) : 5 mA
Off-State Leakage Current @ VDRM IDRM : 0.01 mA
Gate Trigger Voltage (Vgt) : 2.5 V
Packaging : Box
Breakover Current IBO Max : 30 A
Package / Case : TO-225


Specifications

Peak Repetitive Off-State Voltage
RMS On-State Current (T _C=85°C)
Peak One Cycle Surge (60Hz, T _J=110°C)
I ² t Value for Fusing (t=8.3ms)
Peak Gate Power (T_C =85°C)
Average Gate Power (t=8.3ms, T _C=85°C)
Peak Gate Voltage (T _C=85°C)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
Maximum Lead Temperature

Description

The CENTRAL SEMICONDUCTOR 2N6075B  types are silicon sensitive gate triacs designed for such applications as light dimmers, motor controls, heating controls and power supplies.


Parameters:

Technical/Catalog Information	2N6075B
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Triac Type	Logic - Sensitive Gate
Configuration	Single
Voltage - Off State	600V
Current - On State (It (RMS)) (Max)	4A
Voltage - Gate Trigger (Vgt) (Max)	2.5V
Current - Gate Trigger (Igt) (Max)	3mA
Current - Hold (Ih) (Max)	15mA
Current - Non Rep. Surge 50, 60Hz (Itsm)	30A @ 60Hz
Mounting Type	Through Hole
Package / Case	TO-225AA
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6075B 2N6075B 2N6075BOS ND 2N6075BOSND 2N6075BOS