2N7000TA

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 1.2 Ohms
Package / Case : TO-92-3 Kinked Lead
Packaging : Ammo


Features:

Fast Switching Times
Improved Inductive Ruggedness
Lower  Input  Capacitance
Extended  Safe  Operating  Area
Improved High Temperature Reliability


Specifications

Symbol	Characteristic	Value	Units
VDSS	Drain-to-Source Voltage	60	V
ID	Continuous Drain Current (TC=25)	200	mA
	Continuous Drain Current (TC=100)	110
IDM	Drain Current-Pulsed	1000	mW
VGS	Gate-to-Source Voltage	±30	mW/
PD	Total Power Dissipation (TC=25) Linear Derating Factor	400 3.2	mA
TL,TSTG	Operating Junction and Storage Temperature Range	- 55 to +150	VDSS V
TL	Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds	300

Parameters:

Technical/Catalog Information	2N7000TA
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	200mA
Rds On (Max) @ Id, Vgs	5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	30pF @ 25V
Power - Max	400mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-92
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N7000TA 2N7000TA