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2N7002E

MOSFET 60V 240mA 0.5W 3.0ohm @ 10V

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SeekIC No. : 00164581 Detail

2N7002E: MOSFET 60V 240mA 0.5W 3.0ohm @ 10V

2N7002E Data Sheet

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Part Number:
2N7002E
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.115 A
Resistance Drain-Source RDS (on) : 7.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 0.115 A
Resistance Drain-Source RDS (on) : 7.5 Ohms


Features:

Logic level threshold compatible
Very fast switching
Surface-mounted package
TrenchMOS™ technology






Application

Logic level translator
High speed line driver




Specifications

Part Number 2N7002E
Config/
Polarity		 N
PD
(W)		 0.3
VDSS
(V)		 60
VGSS (+/-)
(V)		 20
ID
(A)		 0.24
RDS(on) Max () @ VGS; 1.8V
RDS(on) Max () @ VGS; 2.5V
RDS(on) Max () @ VGS; 4.0V
RDS(on) Max () @ VGS; 4.5V 4
RDS(on) Max () @ VGS; 5V
RDS(on) Max () @ VGS; 10.0V 3
VGS(th)
(V)		 2.5
Ciss (typ)
(pF)		 50
Qg (typ) (nC)
@ VGS; 4.5V
Qg (typ) (nC)
@ VGS; 5V
Qg (typ) (nC)
@ VGS; 10V





Description

2N7002E, N-Channel 60-V MOSFET




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