2N7002E Selling Leads, Price trend , Vishay/Siliconix, 2N7002E DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00164581 Detail

2N7002E: MOSFET 60V 240mA 0.5W 3.0ohm @ 10V

2N7002E Data Sheet

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Part Number:: 2N7002E
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2025/12/5

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Recent History
What is this?

2N7000 evaluate
US $.05 - .07 / Piece

MOSFET N-CHANNEL 60V 200mA
2N7000 AMO evaluate
MOSFET TRENCH 31V-99V G2
2N7000,126 evaluate
MOSFET N-CH 60V 300MA TO-92

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	60 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	0.115 A
Resistance Drain-Source RDS (on) :	7.5 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-23	Packaging :	Bulk

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 0.115 A
Resistance Drain-Source RDS (on) : 7.5 Ohms

Features:

Logic level threshold compatible
Very fast switching
Surface-mounted package
TrenchMOS™ technology

Application

Logic level translator
High speed line driver

Specifications

Part Number	2N7002E
Config/ Polarity	N
P_D (W)	0.3
V_DSS (V)	60
V_GSS(+/-) (V)	20
I_D (A)	0.24
R_{DS(on) Max}() @ V_GS; 1.8V
R_{DS(on) Max}() @ V_GS; 2.5V
R_{DS(on) Max}() @ V_GS; 4.0V
R_{DS(on) Max}() @ V_GS; 4.5V	4
R_{DS(on) Max}() @ V_GS; 5V
R_{DS(on) Max}() @ V_GS; 10.0V	3
V_GS(th) (V)	2.5
C_iss (typ) (pF)	50
Qg (typ) (nC) @ V_GS;4.5V
Qg (typ) (nC) @ V_GS;5V
Qg (typ) (nC) @ V_GS;10V

Description

2N7002E, N-Channel 60-V MOSFET

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2N7002E

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