Features: • RDS(ON), VGS@10V,IDS@500mA=3• RDS(ON), VGS@4.5V,IDS@200mA=4• Advanced Trench Process Technology• High Density Cell Design For Ultra Low On-Resistance• Very Low Leakage Current In Off Condition• Specially Designed for Battery Operated Systems, Solid-S...
2N7002KDW: Features: • RDS(ON), VGS@10V,IDS@500mA=3• RDS(ON), VGS@4.5V,IDS@200mA=4• Advanced Trench Process Technology• High Density Cell Design For Ultra Low On-Resistance• Very ...
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| Parameter | Symbol | AOTF10N60 | Unit |
| Drain-Source Voltage | VDS | 60 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Conti nuous Drai n Current | ID | 115 | A |
| Pulsed Drai n Current 1 ) | IDM | 800 | A |
| Maximum Power Di ssi pati on TA =25 TA =75 |
PD |
200 |
W/ |
| Operati ng Juncti on and Storage Temperature Range | TJ,Tstg | -55 to +150 | |
| Junction-to Ambient Thermal Resistance(PCB mounted)2 | RJ A | 625 | /W |