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2N7002KDW

Features: • RDS(ON), VGS@10V,IDS@500mA=3• RDS(ON), VGS@4.5V,IDS@200mA=4• Advanced Trench Process Technology• High Density Cell Design For Ultra Low On-Resistance• Very Low Leakage Current In Off Condition• Specially Designed for Battery Operated Systems, Solid-S...

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SeekIC No. : 004219607 Detail

2N7002KDW: Features: • RDS(ON), VGS@10V,IDS@500mA=3• RDS(ON), VGS@4.5V,IDS@200mA=4• Advanced Trench Process Technology• High Density Cell Design For Ultra Low On-Resistance• Very ...

2N7002KDW Data Sheet

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Part Number:
2N7002KDW
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• RDS(ON), VGS@10V,IDS@500mA=3
• RDS(ON), VGS@4.5V,IDS@200mA=4
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Component are in compliance with EU RoHS 2002/95/EC directives




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Specifications

Parameter Symbol AOTF10N60 Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Conti nuous Drai n Current ID 115 A
Pulsed Drai n Current 1 ) IDM 800 A
Maximum Power Di ssi pati on TA =25
TA =75		 PD

200
120

 W/
Operati ng Juncti on and Storage Temperature Range TJ,Tstg -55 to +150
Junction-to Ambient Thermal Resistance(PCB mounted)2 RJ A 625 /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec




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