2N7002KW

Gate-Source Breakdown Voltage :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 310 mA
Package / Case : SOT-323
Resistance Drain-Source RDS (on) : 3 Ohms


Features:

• R_DS(ON), V_GS@10V,I_DS@500mA=3Ω
• R_DS(ON), V_GS@4.5V,I_DS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps,
Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Component are in compliance with EU RoHS 2002/95/EC directives




Pinout






Specifications

PARAMETER	Symbol	Limit	Units
Drain-Source Voltage	VDS	60	V
Date-Source Voltage	VGS	±20	V
Continuous Drain Current	ID	115	mA
Pulsed Drain Current1]	LDM	800	mA
Maximum Power Dissipation TA=25 TA=75	PD	200 120	mW
Operting Jumction and Storage Temperature Range	TJ,TSTG	-55 to +150
Jumction-to Ambient Thermal Resistance(PCB mounted)2	RJA	625	/W

Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec